RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 9380
Amount: $218,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1990
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Advanced Research & Applctns
425 Lakeside Dr, Sunnyvale, CA, 94086
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr L J Palkuti
 (408) 733-7780
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE DEVELOPMENT OF ANALOG DEVICES FABRICATED ON DEFECT-FREE ADVANCED SUBSTRATES WITH INCREASED NEUTRON TOLERANCE IS PROPOSED. THIS CONCEPT WILL IMPLEMENT ULTRA-THIN, DEFECT-FREE, SILICON-ON-INSULATOR SUBSTRATES FABRICATED BY BONDING AND ETCH BACK (BESOI) TO DEMONSTRATE LATERAL BIPOLAR DEVICES WITH EXTREMELY LOW BASE RESISTANCE AND RECOMBINATION VOLUME. DEVICES WITH A CUT-OFF FREQUENCY IN EXCESS OF 10GHZ ARE PROPOSED UTILIZING CONVENTIONAL BICMOS PROCESSING PROCEDURES. THESE DEVICES ARE EXPECTED TO IMPROVE NEUTRON-INDUCED DEGRADATION BY AN ORDER-OF-MAGNITUDE OVER CONVENTIONAL ANALOG CIRCUITS. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE FABRICATION OF SUITABLE TEST STRUCTURE ON BESOI SUBSTRATE MATERIAL; TO DETERMINE THE RECOMBINATION PARAMETERS FOR BOTH N-AND P-TYPE BASE DEVICES BOTH BEFOR AND AFTER NEUTRON IRRADIATION AND PROJECT THE CHARACTERISTICS OF A NEUTRON-HARDENED ANALOG DEMONSTRATION CHIP TO BE DESIGNED, FABRICATED AND VALIDATED IN PHASE II.

* information listed above is at the time of submission.

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