RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$218,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
9380
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Research & Applctns
425 Lakeside Dr, Sunnyvale, CA, 94086
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr L J Palkuti
(408) 733-7780
Business Contact:
() -
Research Institution:
n/a
Abstract
THE DEVELOPMENT OF ANALOG DEVICES FABRICATED ON DEFECT-FREE ADVANCED SUBSTRATES WITH INCREASED NEUTRON TOLERANCE IS PROPOSED. THIS CONCEPT WILL IMPLEMENT ULTRA-THIN, DEFECT-FREE, SILICON-ON-INSULATOR SUBSTRATES FABRICATED BY BONDING AND ETCH BACK (BESOI) TO DEMONSTRATE LATERAL BIPOLAR DEVICES WITH EXTREMELY LOW BASE RESISTANCE AND RECOMBINATION VOLUME. DEVICES WITH A CUT-OFF FREQUENCY IN EXCESS OF 10GHZ ARE PROPOSED UTILIZING CONVENTIONAL BICMOS PROCESSING PROCEDURES. THESE DEVICES ARE EXPECTED TO IMPROVE NEUTRON-INDUCED DEGRADATION BY AN ORDER-OF-MAGNITUDE OVER CONVENTIONAL ANALOG CIRCUITS. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE FABRICATION OF SUITABLE TEST STRUCTURE ON BESOI SUBSTRATE MATERIAL; TO DETERMINE THE RECOMBINATION PARAMETERS FOR BOTH N-AND P-TYPE BASE DEVICES BOTH BEFOR AND AFTER NEUTRON IRRADIATION AND PROJECT THE CHARACTERISTICS OF A NEUTRON-HARDENED ANALOG DEMONSTRATION CHIP TO BE DESIGNED, FABRICATED AND VALIDATED IN PHASE II.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government