GAAS WAFER TESTING FOR RADIATION-INDUCED TRANSIENT UPSET

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$243,687.00
Award Year:
1991
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
9382
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Research & Applctns
425 Lakeside Dr, Sunnyvale, CA, 94086
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr L J Palkuti
(408) 733-7780
Business Contact:
() -
Research Institution:
n/a
Abstract
THE DEVELOPMENT OF A WAFER-LEVEL TESTING TECHNIQUE FOR MULTIGIGAHERTZ GAAS DIGITAL INTEGRATED CIRCUITS TO CHARACTERIZE THE TRANSIENT-RADIATION-INDUCED UPSET LEVEL IS PROPOSED. THIS CONCEPT WILL ALLOW THE OPTIMIZATION OF THE UPSET LEVEL IN HIGH PIN-OUT DENSITY CIRCUITS USING AN ON-SITE, QUICK TURNAROUND PROCEDURE FOR TECHNOLOGY DEVELOPMENT AS WELL AS CIRCUIT SCREENING. THIS NONDESTRUCTIVE TECHNIQUE CAN BE APPLIED TO ESTABLISH THE ULTIMATE UPSET LEVEL WITHOUT EXPENSIVE OFF-SITE QUALIFICATION TESTING. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE THE IMPLEMENTATION OF SUITABLE SUBBANDGAP LASER SOURCE FOR WAFER-LEVEL SIMULATION, THE DEVELOPMENT OF A SUITABLE DATA BASE TO ESTABLISH CORRELATION BETWEEN LASER AND CONVENTIONAL LINAC SIMULATION FOR VARIOUS TEST DEVICES AND CIRCUITS; AND DEMONSTRATION OF THE APPLICABILITY OF THE LASER SIMULATION TECHNIQUE TO STATE-OF-THE-ART GAAS CIRCUITS BY EXTENDING THE EXPERIMENTAL DATA BASE WITH PHOTORESPONSE SIMULATION.

* information listed above is at the time of submission.

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