Ultrathin BESOI for Fully Depleted CMOS Applications

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$498,312.00
Award Year:
1995
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
25696
Agency Tracking Number:
25696
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
425 Lakeside Drive, Sunnyvale, CA, 94086
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Everett E. King
(408) 733-7780
Business Contact:
() -
Research Institute:
n/a
Abstract
BESOI fabrication techniques will be evaluated to select an optimum approach for manufacturing ultrathin silicon films on 150- and 200-mm diameter wafers. A supplier of such BESOI material will be identified. The baseline will be the SiGe etch stop and strain-sensitive etch method which ARACOR has already demonstrated to be capable of producing defect-free, undoped films that are as thin as 1000 angstrom on 100-mm wafers. ARACOR will demonstrate this BESOI process on 150-mm wafers in Phase I. In addition, a fully-depleted CMOS process flow for ultrathin SOI material, a suitable circuit to demonstrate this process, and a test matrix to validate the process and circuit will also be defined for subsequent use in the Phase II program. An option for Phase I will be to fabricate the 150-mm BESOI substrates needed to begin circuit processing in Phase II.

* information listed above is at the time of submission.

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