Ultrathin BESOI for Fully Depleted CMOS Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 25696
Amount: $498,312.00
Phase: Phase II
Program: SBIR
Awards Year: 1995
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
425 Lakeside Drive, Sunnyvale, CA, 94086
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Everett E. King
 (408) 733-7780
Business Contact
Phone: () -
Research Institution
BESOI fabrication techniques will be evaluated to select an optimum approach for manufacturing ultrathin silicon films on 150- and 200-mm diameter wafers. A supplier of such BESOI material will be identified. The baseline will be the SiGe etch stop and strain-sensitive etch method which ARACOR has already demonstrated to be capable of producing defect-free, undoped films that are as thin as 1000 angstrom on 100-mm wafers. ARACOR will demonstrate this BESOI process on 150-mm wafers in Phase I. In addition, a fully-depleted CMOS process flow for ultrathin SOI material, a suitable circuit to demonstrate this process, and a test matrix to validate the process and circuit will also be defined for subsequent use in the Phase II program. An option for Phase I will be to fabricate the 150-mm BESOI substrates needed to begin circuit processing in Phase II.

* Information listed above is at the time of submission. *

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