Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation Transmit Receive (T/R) Module Power Supplies

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
HQ0147-09-C-7143
Award Id:
91564
Agency Tracking Number:
B083-029-0226
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
AEGIS TECHNOLOGY (Currently Aegis Technology Inc.)
3300 A Westminister Ave., Santa Ana, CA, 92703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
112614594
Principal Investigator:
Timothy Lin
Scientist
(714) 554-5511
timlin@aegistech.net
Business Contact:
Bob Liu
Manager
(714) 265-1238
bobliu@aegistech.net
Research Institution:
n/a
Abstract
This SBIR project is to develop and demonstrate high-efficiency, compact power converters based on the emerging wide-bandgap SiC semiconductor technology, which can be applied in the power supply system for next generation GaN-based radar T/R modules. Wide-bandgap SiC power devices have the potential for reliable operations at higher voltages, higher frequencies and higher junction temperatures, thus higher power densities than what can be achieved with Si devices. These advantages enable the SiC -based power conversion systems (PCM) to be made smaller, lightweight, more efficient and robust. Despite this potential promise, more studies are needed to address the design and fabrication of SiC-based PCMs before their full potential can be realized. This project will develop and demonstrate a high-efficiency, compact SiC-based power converter system, resolving the related technical issues and demonstrating the benefits of using SiC power devices in a system level. The feasibility study in the proposed Phase I project will focus the supporting technologies to implement a 5 KW SiC-based converter, including: (1) Circuit design of two simple representative SiC-based converter topologies (DC-AC, and DC-DC buck) and modeling to evaluate the converter performance (power loss, efficiency, and weight/size of heatsink etc.), (2) High temperature packaging and high power density thermal management to support the SiC converter, and (3) Gate drive design suitable for SiC power devices that will enable the devices to work at high power densities and high frequencies.

* information listed above is at the time of submission.

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