LASER-INDUCED SURFACE CHEMICAL EPITAXY: A NOVEL THIN FILM DEPOSITION TECHNIQUE

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$177,000.00
Award Year:
1987
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
3622
Agency Tracking Number:
3622
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
45 Manning Rd, Billerica, MA, 01821
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Charter Stinespring
(617) 663-9500
Business Contact:
() -
Research Institute:
n/a
Abstract
THIS PROPOSAL IDENTIFIED A NEW TYPE OF LASER-INDUCED EPITAXIAL GROWTH PROCESS TERMED LASER-INDUCED SURFACE CHEMICAL EPITAXY (LSCE), AND ADDRESSES KEY ISSUED RELATING TO THE FEASIBILITY OF THE TECHNIQUES. THE POTENTIAL ADVANTAGES OF LSCE INCLUDE LAYER-BY-LAYER CONTROL OVER STOICHIOMETRY, ABRUPT INTERFACES, AND LOW GROWTH TEMPERATURES. ADDITIONALLY, LSCE MAY BE USED TO DEPOSIT A WIDE VARIETY OF MATERIALS INCLUDING METALS, METAL OXIDES, SULFIDES, AND PHOSPHIDES, AND II-VI AND III-V COMPOUNDS. THESE ADVANTAGES MAKE THE LSCE TECHNIQUE PARTICULARY WELL SUITED TO THE DEPOSITION OF QUANTUM WELL AND SUPERLATTICE MATERIALS AND DEVICE STRUCTURES WHICH WILL PLAY AN INCREASINGLY IMPORTANT ROLE IN MICROELECTRONICS AND ELECTROOPTICS TECHNOLOGY.

* information listed above is at the time of submission.

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