3-D Model for Advanced FPA Detector with Statistical Results Presentation

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$99,776.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
36890
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Aet, Inc.
P.O. Box 33071, Indialantic, FL, 32903
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Glenn T. Hess
(407) 727-7587
Business Contact:
() -
Research Institution:
n/a
Abstract
The US Army has identified the need for extending existing hetrojunction device physics models to a 3-D FPA process and device model. Specifically, this involves developing models for the operation and performance of double hetrojunction MCT photo-diodes devices. AET, Inc. proposes to use physics based semiconductor device equations solved using a finite element analysis similar to commercial device simulators. However, these equations and the material parameters and models will be modified specifically for double layer hetrojunction MCT photo diodes of varying composition. Additionally, AET will combine this model with its STADIUM statistical methodology. The user will then be able to vary inputs to the model such as doping, material composition, junction locations. The STADIUM software will perform the necessary simulations using the MCT model and automatically determine each of the model's inputs affect on performance parameters. These affects and responses will then be displayed in a 3-D graphical format. This program will result in prototype models and software for design advanced FPA detector devices, especially two color devices. This software will facilitate the low cost manufacture of double layer hetrojunction MCT devices for military and commercial use.

* information listed above is at the time of submission.

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