Diamond Technology High Temperature Electronics Radiation Hardened Interceptor Communications

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$744,386.00
Award Year:
2008
Program:
STTR
Phase:
Phase II
Contract:
W9113M-09-C-0021
Award Id:
83283
Agency Tracking Number:
B074-010-0094
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1900 S. Harbor City Blvd., Suite 236, Melbourne, FL, 32901
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
878400068
Principal Investigator:
Glenn Hess
Chief Technical Officer
(321) 727-0328
ghess@aet-usa.com
Business Contact:
Thomas Sanders, Jr
Chief Financial Officer
(321) 727-0328
tjs@aet-usa.com
Research Institution:
VANDERBILT UNIV.
Jim Davidson
Box 351591, Station B
Nashville, TN, 37235
(615) 343-7886
Nonprofit college or university
Abstract
The goal of this program is to develop high-speed interceptor communications solutions that are hardened to space and nuclear radiation, including high altitude nuclear explosions (HANEs). AET will design and develop lateral emission-based diamond integrated logic circuits that have been electrically tested, packaged, and characterized for temperature insensitivity and radiation hardness A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and neglible parasitic capacitance features, lithography-controlled small interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using a simple microfabrication process scheme. The Vanderbilt University Diamond Laboratory built and reported the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.

* information listed above is at the time of submission.

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