Real Time Automated Screening and Selection of Phage Displayed Antibody
Small Business Information
117 Devlen Rd., Groton, NY, 13073
AbstractNot Available This Small Business Innovation Research Phase I project features as the main goal demonstration of the feasibility of a single-electron transistor with the following characteristics: 1) a high voltage gain, 2) gain over a significant range of operating voltage, and 3) modulation of the current by the gate even if the bias voltage is large. The transistor is an important device mainly because it can amplify a weak signal. Theoretical estimates of the gain from present single-electron transistors show that, under optimistic conditions, the maximum gain is on the order of 10. Furthermore gain is only possible over a narrow range of input voltage. It was recently demonstrated that a controllable saturated tunneling current is available in a degenerate p-n junction. Here, we propose to make use of that saturated tunneling current, ad intrinsic bandgap attributes, to design a single-electron transistor with the aforementioned characteristics
* information listed above is at the time of submission.