Control of Dislocations for Improved IR Sensors Using Epitaxial Necking

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-07-C-0105
Agency Tracking Number: A064-021-0289
Amount: $749,938.00
Phase: Phase II
Program: STTR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: A06-T021
Solicitation Number: N/A
Small Business Information
15 Cabot Road, Woburn, MA, 01801
DUNS: 004841644
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Matthew Erdtmann
 Principal Scientist
 (781) 935-1200
Business Contact
 Mary Davoli
Title: Contract Adminitrator
Phone: (781) 935-1200
Research Institution
 Anne Zotto Shumway
 110 8th Street, JEC 6003
Troy, NY, 12180 3590
 (518) 276-2786
 Domestic nonprofit research organization
It is well established that in order to produce large-format LWIR HgCdTe FPAs for third-generation IR systems, Si substrates must be used. In the DoD Militarily Critical Technologies List (December 2005), HgCdTe/Si is listed as a critical material and achieving an etch pit density (EPD) < 1x106 cm-2 is identified as a critical technology parameter. Thus it is imperative that a manufacturable technique to control EPD in HgCdTe/Si be demonstrated. In this Army STTR program, Agiltron, Rensselaer Polytechnic Institute, and Raytheon Vision Systems will fabricate LWIR HgCdTe/Si FPAs by producing low-defectivity HgCdTe films on lattice-mismatched Si substrates. Employing the innovative epitaxial necking technique, the defect density of the HgCdTe/Si films will be lowered to levels found in HgCdTe/CdZnTe films. Building on the achievements of Phase I, the objectives for Phase II are (i) to produce CdTe/Si substrates with a threading dislocation density (TDD) of less than 2x105 cm-2 and (ii) to demonstrate LWIR HgCdTe FPAs on CdTe/Si substrates with performance comparably equivalent to HgCdTe FPAs on lattice-matched CdZnTe substrates. Agiltron will deliver to NVESD one packaged 256x256 LWIR HgCdTe/Si FPA at the end of Phase II.

* information listed above is at the time of submission.

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