You are here

Novel Ultra-High Rate Finishing Processes for Production of 100 mm Epi-ready GaN Substrates Title on abstract leaves out the word "Novel")

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-SC0013923
Agency Tracking Number: 218732
Amount: $149,997.98
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 11a
Solicitation Number: DE-FOA-0001227
Solicitation Year: 2015
Award Year: 2015
Award Start Date (Proposal Award Date): 2015-06-08
Award End Date (Contract End Date): 2016-03-07
Small Business Information
1912 NW 67th Place
Gainesville, FL 32653-1649
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Rajiv K Singh
 (352) 334-7270
Business Contact
 Deepika Singh
Title: Dr.
Phone: (352) 334-7237
Research Institution

Current gallium nitride bulk substrate finishing process technology yields poor structural quality of surfaces. The current process takes longer time and results in defective surface. The wafering process needs to be improved to achieve high performance GaN devices. A novel rapid, mechanical and chemical mechanical process will be explored to rapidly polish GaN substrates. The process will address the defects in the surface of GaN substrates. The process will reduce the wafering time with low defectivity and yield ultra-smooth substrates. The defect free substrate will increase yield, reduce manufacturing time and cost. The feasibility analysis of novel polishing of GaN and its efficacy will be explored. The improvement in GaN polishing process will be attempted.

The GaN substrates will enable advanced devices that can be used in Blue ray laser diode), electrical and hybrid electrical vehicles, PV invertors, general lighting LEDs) and displays HB- LEDS) and high power grids.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government