LEAD IODIDE SEMICONDUCTOR NUCLEAR SENSOR

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$40,000.00
Award Year:
1987
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
7648
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Radiation Monitoring Devices
44 Hunt Street, Watertown, MA, 02172
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
LEAD IODIDE (PBI2) IS A LITTLE USED COMPOUND SEMICONDUCTOR. THE HIGH ATOMIC NUMBERS OF ITS CONSTITUENT ELEMENTS GIVES ITEXTRAORDINARY PHOTOELECTRIC ABSORPTION EFFICIENCY FOR GAMMA PHOTONS, WHILE ITS 2.5 EV BANDGAP PROMISES PERFORMANCEAT TEMPERATURES UP TO 250 DEGREES C. IT HAS SHOWN SOME PROMISE AS A HIGH EFFICIENCY SOLID-STATE DETECTOR, BUT EARLYDEVICES WERE LIMITED BY MATERIAL IMPURITIES AND IMPERFECTIONRECENTLY NEW PURIFICATION AND CRYSTAL GROWTH TECHNIQUES HAVEBEEN DEVELOPED, LEADING TO MATERIAL WITH MUCH IMPROVED CRYSTALLOGRAPHIC, MECHANICAL AND OPTICAL PROPERTIES. WE PROPOSE TO APPLY THESE TECHNIQUES TO THE PROBLEM OF DEVELOPING A NEW HIGH-Z SEMICONDUCTOR DETECTOR. IN PHASE I WE WILL PURIFY THE MATERIAL, GROW SEVERAL CRYSTALS AND EVALUATE THEIR ELECTRONIC PROPERTIES.

* information listed above is at the time of submission.

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