Planar, High Frequency, Power Conversion Device Technology

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,485.00
Award Year:
2009
Program:
STTR
Phase:
Phase I
Contract:
N00014-09-M-0341
Agency Tracking Number:
N09A-023-0584
Solicitation Year:
2009
Solicitation Topic Code:
N09-T023
Solicitation Number:
2009.A
Small Business Information
Velox Semiconductor Corporation
394 Elizabeth Avenue, Somerset, NJ, 08873
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
556964638
Principal Investigator:
Milan Pophristic
Director of Contract Research
(732) 469-3345
mpophristic@veloxsemi.com
Business Contact:
Thomas Hierl
President
(732) 469-3345
thierl@veloxsemi.com
Research Institution:
Rensselaer Polytehnic Institute
Michael Shur
110 8th St.
Troy, NY, 12180 3590
(518) 276-2201
Nonprofit college or university
Abstract
The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team intends to demonstrate an initial normally-off device with threshold voltage (VT) higher than 2.5V (Phase I) without jeopardizing other Hetero-junction Field Effect Transistor (HFET) performance indicators, such as specific on-resistance (Ron), maximum current density (Jd,max) and switching frequency (f). This solution will provide a significant device performance and reliability improvement due to the ability to optimize the power transistor in the structure.

* information listed above is at the time of submission.

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