Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation Transmit Receive (T/R) Module Power Supplies

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-09-C-0110
Agency Tracking Number: B083-029-0596
Amount: $99,985.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: MDA08-029
Solicitation Number: 2008.3
Small Business Information
394 Elizabeth Avenue, Somerset, NJ, 08873
DUNS: 556964638
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Milan Pophristic
 Director of Contract Research
 (732) 469-3345
Business Contact
 Tom Hierl
Title: CEO
Phone: (732) 469-3345
Email: thierl@veloxsemi.com
Research Institution
GaN (Gallium Nitride) High Electron Mobility Transistor (HFET) devices face severe thermal control problems as a result of high power densities which result from the need for more power and the ongoing reduction in geometries of individual devices. The device lattice temperature increases under high power causing several detriment effects: a) The carrier phonon scattering rate increases causing a reduction of the carrier mobility and an increase of the device resistance. Under certain bias conditions, the increase of device on-resistance could lead to an increase of the dissipated power and therefore a destructive thermal run-away. b) High lattice temperature increases the reliability risk and decreases the device lifetime. The Velox team proposes transferring and optimizing the existing AlGaN/GaN HFET MOCVD epitaxial deposition and device fabrication process developed by Velox Semiconductor Corp. on Si to a high thermally conductive silicon-on-diamond substrate developed by sp3 Inc. The team also intends to demonstrate initial devices for power inverters and converters in power supplies supporting X-band radar utilizing these substrates. This solution can provide a significant device performance and reliability improvement due to better device thermal management. The complete achievement of the Phase I goals will set the baseline process flow for device fabrication.

* Information listed above is at the time of submission. *

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