Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation Transmit Receive (T/R) Module Power Supplies

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,985.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-09-C-0110
Award Id:
91569
Agency Tracking Number:
B083-029-0596
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
394 Elizabeth Avenue, Somerset, NJ, 08873
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
556964638
Principal Investigator:
Milan Pophristic
Director of Contract Research
(732) 469-3345
mpophristic@veloxsemi.com
Business Contact:
Tom Hierl
CEO
(732) 469-3345
thierl@veloxsemi.com
Research Institute:
n/a
Abstract
GaN (Gallium Nitride) High Electron Mobility Transistor (HFET) devices face severe thermal control problems as a result of high power densities which result from the need for more power and the ongoing reduction in geometries of individual devices. The device lattice temperature increases under high power causing several detriment effects: a) The carrier phonon scattering rate increases causing a reduction of the carrier mobility and an increase of the device resistance. Under certain bias conditions, the increase of device on-resistance could lead to an increase of the dissipated power and therefore a destructive thermal run-away. b) High lattice temperature increases the reliability risk and decreases the device lifetime. The Velox team proposes transferring and optimizing the existing AlGaN/GaN HFET MOCVD epitaxial deposition and device fabrication process developed by Velox Semiconductor Corp. on Si to a high thermally conductive silicon-on-diamond substrate developed by sp3 Inc. The team also intends to demonstrate initial devices for power inverters and converters in power supplies supporting X-band radar utilizing these substrates. This solution can provide a significant device performance and reliability improvement due to better device thermal management. The complete achievement of the Phase I goals will set the baseline process flow for device fabrication.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government