Integrated Battlefield Visualization System Using Sensor and Cultural Feature Cross-Cueing

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$120,000.00
Award Year:
1999
Program:
SBIR
Phase:
Phase I
Contract:
A982-1056
Award Id:
44855
Agency Tracking Number:
A982-1056
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
50 Mall Rd., Bulington, MA, 01803
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Alan Chao
(781) 273-3388
Business Contact:
() -
Research Institution:
n/a
Abstract
Not Available AmberWave proposes to demonstrate and develop III-V metal semiconductor field effect transistors (MESFETs) and high mobility transistors (HEMTs) on Si using its proprietary technology in the epitaxial deposition of high-quality III-V compounds on Si substrates. The technology employs AmberWave¿s proprietary SiGe graded epitaxial layers that allow the lattice mismatch and thermal expansion differences between Ge and Si to be controlled and accommodated during the growth process. AmberWave has also developed process control that allows the reproducible growth of antiphase-domain-free GaAs/Ge interfaces with minimal interdiffusion. The end result in Ge and GaAs device-quality thin films on Si substrates. In Phase I, AmberWave proposes to demonstrate its fabrication sequence for high quality GaAs on Si on 4-inch Si wafers and evaluate a prototype GaAs MESFET on Ge/SiGe/Si

* information listed above is at the time of submission.

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