Integrated Battlefield Visualization System Using Sensor and Cultural Feature Cross-Cueing
Small Business Information
50 Mall Rd., Bulington, MA, 01803
AbstractNot Available AmberWave proposes to demonstrate and develop III-V metal semiconductor field effect transistors (MESFETs) and high mobility transistors (HEMTs) on Si using its proprietary technology in the epitaxial deposition of high-quality III-V compounds on Si substrates. The technology employs AmberWave¿s proprietary SiGe graded epitaxial layers that allow the lattice mismatch and thermal expansion differences between Ge and Si to be controlled and accommodated during the growth process. AmberWave has also developed process control that allows the reproducible growth of antiphase-domain-free GaAs/Ge interfaces with minimal interdiffusion. The end result in Ge and GaAs device-quality thin films on Si substrates. In Phase I, AmberWave proposes to demonstrate its fabrication sequence for high quality GaAs on Si on 4-inch Si wafers and evaluate a prototype GaAs MESFET on Ge/SiGe/Si
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