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Metal Deposition for Microelectronics Using CO2 as a Solvent

Award Information
Agency: Environmental Protection Agency
Branch: N/A
Contract: EPD04042
Agency Tracking Number: BC3A1-0262
Amount: $69,997.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: C3-NCER-A1
Solicitation Number: PR-NC-03-10275
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-03-01
Award End Date (Contract End Date): 2004-08-31
Small Business Information
7516 Precision Drive
Raleigh, NC 27617
United States
DUNS: 960475226
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 James Deyoung
 Director of R&D
 (919) 313-2108
 jdeyoung@micell.com
Business Contact
 James DeYoung
Title: Director of R&D
Phone: (919) 313-2108
Email: jdeyound@micell.com
Research Institution
N/A
Abstract

MiCell Technologies, Inc., proposes a new process for the deposition of metallic

thin films of copper, ruthenium, titanium, and other metals used as barrier

layers, seed layers, and interconnects. This process would replace the current

electroplating approach used in filling deep trenches and forming thin films

in microelectronic circuit manufacturing. The electroplating process generates

large quantities of aqueous wastes with copper ions and other dangerous chemicals

that must be treated in place. The process being proposed utilizes liquid or

supercritical carbon dioxide as the solvent. In addition to being environmentally

benign, this process also will provide additional control of the metal deposition

processes to create high-quality films and electrical interconnects. This project

is part of an overall strategy to replace all aqueous and organic solvents

in microelectronics fabrication.

The proposed fluid displacement deposition process utilizes a two-step approach

to the formation of the deposited metallic layers. In the first step, organometallic

precursors will be dissolved in either liquid or supercritical carbon dioxide.

The wafer to be coated will be immersed in either the liquid or supercritical

solvent. This solution will be displaced either with carbon dioxide itself

or by a second fluid, such as helium, in the supercritical state. This displacement

step will cause the formation of a thin film that will result in the deposition

of the organometallic precursor on the wafer surface. Because of the low surface

tension and viscosity of the carbon dioxide phase, the precursor will penetrate

uniformly into the narrow gaps on the surface of the circuit. After this film

displacement step, the system can be heated and a reducing agent, such as hydrogen,

can be introduced to remove the organic ligands bound to the metal atoms. After

the reduction step, a solid metallic layer will remain on the surface, which

will form the desired interconnect or thin layer structures.

Phase I will determine the more important operating variables in both the

liquid and supercritical carbon dioxide surface deposition processes. Phase

II will involve the design of a metallization tool that will meet the operating

requirements of industrial microelectronics fabrication. Because of the demand

for faster, more sophisticated structures in modern electronic products, copper

interconnects and metallic barrier and seed layers will play an increasing

role in device fabrication. This environmentally benign process will have a

preferred place in the marketplace.

* Information listed above is at the time of submission. *

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