Photonic Devices on Si Using SiGe Interlayer Technology

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,995.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
DAAD19-01-C-0031
Agency Tracking Number:
A002-2212
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
AMBERWAVE SYSTEMS CORP.
7 Camelot Road, Windham, NH, 03087
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
127717002
Principal Investigator:
Mayank Bulsara
Chief Technology Officer
(603) 425-1965
bulsara@amberwave.com
Business Contact:
Mayank Bulsara
Chief Technology Officer
(603) 425-1965
bulsara@amberwave.com
Research Institution:
n/a
Abstract
AmberWave Systems Corporation (ASC) proposes to implement its proprietary SiGe interlayer technology to demonstrate lasers on Si with emission in the visible spectrum. The technology employs ASC's proprietary SiGe interlayer processes to accommodate thelattice-mismatch and thermal expansion differences between GaAs and Si. In conjunction, ASC has established expertise in the growth of antiphase-domain-free GaAs on Ge. The final result is GaAs (and other III-V compound semiconductors) on Si ofunprecedented material quality. ASC will demonstrate the fundamental technology to develop III-V compound lasers on Si and then commercialize the technology in high-speed computation and optical communications systems. The advantages of such systems willbe the combination of the high-performance capabilities of III-V compounds with the low cost and very large scale integration capability of Si manufacturing methods. In Phase I, ASC proposes to epitaxially grow, fabricate, and test a laser on Si thatemits in the visible spectrum.AmberWave Systems Corporation (ASC) can produce monolithically integrated III-V compound optoelectronic devices on Si of world-record quality. In Phase I, ASC will validate ASC's state-of-the art materials integrationtechnology by fabricating an efficient and reliable visible laser on Si. The commercial application of such devices include high-speed computing via optical interconnects on Si and integrated optical communications systems on Si.

* information listed above is at the time of submission.

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