Photonic Devices on Si Using SiGe Interlayer Technology

Award Information
Agency:
Department of Defense
Amount:
$69,995.00
Program:
SBIR
Contract:
DAAD19-01-C-0031
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Army
Award Year:
2001
Phase:
Phase I
Agency Tracking Number:
A002-2212
Solicitation Topic Code:
N/A
Small Business Information
AMBERWAVE SYSTEMS CORP.
7 Camelot Road, Windham, NH, 03087
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
127717002
Principal Investigator
 Mayank Bulsara
 Chief Technology Officer
 (603) 425-1965
 bulsara@amberwave.com
Business Contact
 Mayank Bulsara
Title: Chief Technology Officer
Phone: (603) 425-1965
Email: bulsara@amberwave.com
Research Institution
N/A
Abstract
AmberWave Systems Corporation (ASC) proposes to implement its proprietary SiGe interlayer technology to demonstrate lasers on Si with emission in the visible spectrum. The technology employs ASC's proprietary SiGe interlayer processes to accommodate thelattice-mismatch and thermal expansion differences between GaAs and Si. In conjunction, ASC has established expertise in the growth of antiphase-domain-free GaAs on Ge. The final result is GaAs (and other III-V compound semiconductors) on Si ofunprecedented material quality. ASC will demonstrate the fundamental technology to develop III-V compound lasers on Si and then commercialize the technology in high-speed computation and optical communications systems. The advantages of such systems willbe the combination of the high-performance capabilities of III-V compounds with the low cost and very large scale integration capability of Si manufacturing methods. In Phase I, ASC proposes to epitaxially grow, fabricate, and test a laser on Si thatemits in the visible spectrum.AmberWave Systems Corporation (ASC) can produce monolithically integrated III-V compound optoelectronic devices on Si of world-record quality. In Phase I, ASC will validate ASC's state-of-the art materials integrationtechnology by fabricating an efficient and reliable visible laser on Si. The commercial application of such devices include high-speed computing via optical interconnects on Si and integrated optical communications systems on Si.

* information listed above is at the time of submission.

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