High Energy Density and High Thermally Rated Pulsed Power Capacitor Devices

Award Information
Agency:
Department of Defense
Branch
Office of the Secretary of Defense
Amount:
$100,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
FA8650-05-M-2503
Award Id:
71951
Agency Tracking Number:
O043-EP7-1221
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
c/o University Buffalo Incubator, 1576 Sweet Home, Amherst, NY, 14228
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
007708613
Principal Investigator:
NehalChokshi
Technical Business Development Mgr
(716) 639-0632
nehalchokshi@ambptech.com
Business Contact:
GaryTompa
President
(732) 302-9274
gstompa@aol.com
Research Institute:
n/a
Abstract
The proposed program by AMBP Tech and Professor Sarjeant's group at SUNY Buffalo will develop and demonstrate a rapid large area deposition process of high energy density amorphous fluorinated carbon (a-C:F) films onto thin aluminum (4um thin) electrode substrates. The innovative research consists of utilizing AMBP Tech's patented high deposition rate technologies of LAMBD or PAMBD tools to optimize the stoichiometry and morphology of a-C:F films in terms of the energy density. Feedback will be provided by evaluating the electrical characteristics of the films via the unique Partial Discharge (PD) analytical setup of the Energy Systems Institute (ESI) directed by Professor Sarjeant.

* information listed above is at the time of submission.

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