High Energy Density and High Thermally Rated Pulsed Power Capacitor Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-05-M-2503
Agency Tracking Number: O043-EP7-1221
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: OSD04-EP7
Solicitation Number: 2004.3
Small Business Information
c/o University Buffalo Incubator, 1576 Sweet Home, Amherst, NY, 14228
DUNS: 007708613
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nehal Chokshi
 Technical Business Development Mgr
 (716) 639-0632
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: gstompa@aol.com
Research Institution
The proposed program by AMBP Tech and Professor Sarjeant's group at SUNY Buffalo will develop and demonstrate a rapid large area deposition process of high energy density amorphous fluorinated carbon (a-C:F) films onto thin aluminum (4um thin) electrode substrates. The innovative research consists of utilizing AMBP Tech's patented high deposition rate technologies of LAMBD or PAMBD tools to optimize the stoichiometry and morphology of a-C:F films in terms of the energy density. Feedback will be provided by evaluating the electrical characteristics of the films via the unique Partial Discharge (PD) analytical setup of the Energy Systems Institute (ESI) directed by Professor Sarjeant.

* Information listed above is at the time of submission. *

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