Barium Titanate Formation for Electronic/Photonic Applications

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-C-2233
Agency Tracking Number: 01-0359
Amount: $484,074.00
Phase: Phase II
Program: SBIR
Awards Year: 2005
Solitcitation Year: 2001
Solitcitation Topic Code: MDA01-014
Solitcitation Number: 2001.3
Small Business Information
INTEGRAL WAVE TECHNOLOGIES
700 Research Center Blvd. M/S-, Fayetteville, AR, 72701
Duns: 006154459
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Nelms
 Chief Technology Officer
 (501) 575-5614
 david.nelms@integralwave.com
Business Contact
 David Nelms
Title: Chief Technology Officer
Phone: (501) 575-5614
Email: david.nelms@integralwave.com
Research Institution
N/A
Abstract
Integral Wave Technologies (for known as Arkansas Microelectronic Development Corporation) is developing a process for growing ferroelectric, polycrystalline barium titanate (BaTiO3) thin-films, by anodic oxidation of co-evaporated barium-titanium films (BaTi). Though films of this nature find applications in several electrical devices, Integral Wave will utilize this novel method of ferroelectric formation, Integral Wave will be able to obtain thin, uniform ferroelectric films that exhibit dielectric constants from approximately 150 to 1500. This will allow the fabrication of integral thin-film capacitors, which exhibit tremendous volume and space saving benefits over traditional discrete capacitors, and offering very large capacitance densities, from 1uf/cm2 up to 13uf/cm2. These values are over 2000 times greater than the value exhibited by the leading commercially available thing and thick-film dielectric. Since crystalline ferroelectrics have numerous applications as passive and active optical components, such as couplers, taps, attenuators, modulators, switches and wavelength converters, Integral Wave will utilize the low loss characteristic of these films and explore the potential application of this material in optical devices.

* information listed above is at the time of submission.

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