Animation, Visualization and Real-Time Control of Automated Ammunition Handling Manipulators

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,975.00
Award Year:
1999
Program:
SBIR
Phase:
Phase I
Contract:
A982-0332
Agency Tracking Number:
A982-0332
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
AMERICAN GNC CORP.
9131 Mason Ave., Chatsworth, CA, 91311
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Ching-Fang Lin PhD
(818) 407-0092
Business Contact:
() -
Research Institution:
n/a
Abstract
Not Available Up to date, InSb and HgCdTe are the industry standard materials for Infrared focal plan arrays(FPAs) operating in the wavelength regions of 3-5 mm and 8-14 mm (the so-called atmospheric windows).Due to the lack of suitable substrate, the detector arrays must be In bump -bonded to the read-out integrated circuit(ROIC) on Si substrates, which limits array sizes, yield, and stability. ELI proposes to develop high quality InSb on Si epitaxial wafers for large area InSb and HgCdTe based IRFPAs. ELI will apply a novel approach to incorporate a new composition graded buffer layer (CGBL)on Si substrate to reduce/eliminate the threading dislocation in the thin InSb epilayers grown on top of the CGBL. In phase I, design and growth of novel buffers will be carried out, and high quality InSb thin epiwafer will be demonstrated. The optimization of the CGBL and production of high quality Si based InSb epiwafers will be realized in phase II

* information listed above is at the time of submission.

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