Novel multilayer MIM Damascene Capacitor

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-2264
Agency Tracking Number: 02-0013
Amount: $69,265.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
5755 W. Hollilynn Dr., Boise, ID, 83709
DUNS: 076338677
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Douglas Hackler
 (208) 761-0088
Business Contact
 Douglas Hackler
Title: President
Phone: (208) 362-3179
Research Institution
"This proposal is for a (Metal Insulator Metal) MIM multilayer capacitor design that achieves higher capacitance density through the use of large electrode surface area within a small chip dimension utilizing a high-k dielectric in a multi-Damascenefabricated approach consistent with low temperature process requirements. Capacitors, either realized as discrete elements in thin-film technologies, or as integrated components in IC processes, are essential in advanced electronic circuits. Highperformance multilayer capacitors can be used in radio frequency (RF) circuits for oscillators, phase-shift networks and coupling/bypass. With higher linearity and dynamic range, multilayer capacitors could be very useful in analog circuits. Additionally,they could be applied to reduce noise coupling in digital circuit regions adjacent to analog circuitry in mixed signal ICs. Within MPUs, multilayer capacitors could be used for decoupling. Recent innovations in MIM structures and high-k dielectricmaterials provide excellent capacitor performance enhancements but have no tolerance for high temperature annealing post formation of the MIM structure. ANTICIPATED BENEFITS: Reduction in switching noise, enabling of programmable capacitors, high precisioncapacitance, reduced die area, improved resistance, reduced inductance and less dielectric absorption.POTENTIAL COMMERCIAL APPLICATIONS: Decoupling capacitors in MPUs. High precision application in RF c

* Information listed above is at the time of submission. *

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