High-k Dielectric Research for the Development of High Performance Compact Capacitors

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: F33615-03-M-2311
Agency Tracking Number: O022-0228
Amount: $99,683.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3100 S. Vista Ave., Suite 230, Boise, ID, 83705
DUNS: 076338677
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Richard Hayhurst
 Sr. Process Development E
 (208) 366-2773
Business Contact
 Douglas Hackler
Title: President & CEO
Phone: (208) 336-2773
Email: doughackler@americansemi.com
Research Institution
"Development of compact, high energy, pulse power capacitors is the gating technology for Pulse Forming Networks (PFNs) used in directed energy and kinetic energy weapons and microwave systems. This proposal is to explore high permittivity (high-қ)dielectric films and superior electrode materials in a solid state configuration to obtain capacitors that have high voltage breakdown and low leakage with a substantial reduction in size and weight over those currently available. Although high-kdielectrics have superior capacitance per unit area they are inherently leaky. To achieve the superior capacitors for pulsed power devices, it will be necessary to explore high-k dielectrics within the framework of achieving a smaller overall package withhigh Vbd but with minimal leakage. Demonstration of the feasibility of using high-қ dielectrics and achieve high energy capacitors in a smaller package with reduced leakage will be done by fabricating and testing of prototype discrete capacitors.Clearly if successful, this technology can be used to fabricate the discrete capacitors and capacitor networks used in pulse forming networks (PFNs). Additionally, however, it can be incorporated in integrated circuitry (IC) and significantly increasecapacitance per unit area, thereby reducing cost, as well as enhancing circuit performance."

* Information listed above is at the time of submission. *

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