Highly Monodispered MINIM Arrays for Single Electron Transistors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-01-C-0044
Agency Tracking Number: 99-406
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1684 South Research Loop, Suite 518, Tucson, AZ, 85710
DUNS: 046772922
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ayyasamy Aruchamy
 Senior Scientist/Presiden
 (520) 546-6944
Business Contact
 Ayyasamy Aruchamy
Title: President
Phone: (520) 546-6944
Email: amsen@azstarnet.com
Research Institution
As the current trends in transistor miniaturization are continued down to the molecular level ( in a dimension of tens of nanometers or less), the electronic properties of solids and solid-solid interfaces are inherently different on the nanometer level.It is becoming clear that continued increases in circuit density will require fairly dramatic changes in the way transistors are designed and operated. The concept of single electron transistor has the potential to revolutionize this field. This programseeks to build on the success of Phase I to develop nanoelectronic devices with an innovation that focuses on highly monodispersed MINIM (metal-insulator-nanocluster-insulator-metal arrays for single electron transistors. During Phase I, AMSENTechnologies demonstrated the concept that an innovative template-synthesized MINIM arrays could be potentially used as single electron transistors. During Phase II of this program, AMSEN will build on Phase I success, optimize, build prototyped and fieldtest the technology in partnership with DOD and do the ground work for commercialization. Phase II will commercialize the technology and anticipated spin-off The potential for commercialization of single electron devices with good performance andmanufacturability is extremely high. Applications for single electron transistors include ultra-high density information storage, supersensitive electrometry, near-infrared radiation receivers and DC current standard.

* Information listed above is at the time of submission. *

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