Apa Optics, Inc.

Company Information
Address 2950 Ne 84th Lane
Blaine, MN, 55449


Information

DUNS:

# of Employees: 24


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. A GaN-A1GaN CCD for UV Imaging Applications

    Amount: $696,834.00

    We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it' ...

    SBIRPhase II1996Air Force Department of Defense
  2. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    Amount: $299,975.00

    APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical q ...

    SBIRPhase II1995Missile Defense Agency Department of Defense
  3. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    Amount: $680,445.00

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high ...

    SBIRPhase II1995Defense Advanced Research Projects Agency Department of Defense
  4. GaN/AlN Based High Voltage Heterostructure Transistor

    Amount: $84,991.00

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs ...

    SBIRPhase I1995Missile Defense Agency Department of Defense
  5. Development of Compliant Substrates for GaN Epitaxy

    Amount: $99,999.00

    We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with ...

    SBIRPhase I1995Navy Department of Defense
  6. A GaN-A1GaN CCD for UV Imaging Applications

    Amount: $79,943.00

    N/A

    SBIRPhase I1995Air Force Department of Defense
  7. Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

    Amount: $625,000.00

    We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be e ...

    SBIRPhase II1994Air Force Department of Defense
  8. WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

    Amount: $375,000.00

    We propose to demonstrate the design, fabrication, and performance of an integrated optic based device which provides for both multiplexing and independent external modulation of three closely spaced ...

    SBIRPhase II1994Navy Department of Defense
  9. Growth of Bulk Single Crystal AlN Substrates for AlxGa1-xn Epitaxy

    Amount: $99,984.00

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1-xN epitaxy. Our approach is to use a low pressure, hig ...

    SBIRPhase I1994Defense Advanced Research Projects Agency Department of Defense
  10. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    Amount: $99,185.00

    N/A

    SBIRPhase I1994Defense Advanced Research Projects Agency Department of Defense

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