Apa Optics, Inc.

Basic Information

2950 Ne 84th Lane
Blaine, MN, 55449

Company Profile

n/a

Additional Details

Field Value
DUNS: n/a
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 24


  1. A GaN-A1GaN CCD for UV Imaging Applications

    Amount: $696,834.00

    We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it' ...

    SBIR Phase II 1996 Air Force Department of Defense
  2. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    Amount: $299,975.00

    APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical q ...

    SBIR Phase II 1995 Missile Defense Agency Department of Defense
  3. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    Amount: $680,445.00

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high ...

    SBIR Phase II 1995 Defense Advanced Research Projects Agency Department of Defense
  4. GaN/AlN Based High Voltage Heterostructure Transistor

    Amount: $84,991.00

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs ...

    SBIR Phase I 1995 Missile Defense Agency Department of Defense
  5. Development of Compliant Substrates for GaN Epitaxy

    Amount: $99,999.00

    We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with ...

    SBIR Phase I 1995 Navy Department of Defense
  6. A GaN-A1GaN CCD for UV Imaging Applications

    Amount: $79,943.00

    N/A

    SBIR Phase I 1995 Air Force Department of Defense
  7. Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

    Amount: $625,000.00

    We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be e ...

    SBIR Phase II 1994 Air Force Department of Defense
  8. WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

    Amount: $375,000.00

    We propose to demonstrate the design, fabrication, and performance of an integrated optic based device which provides for both multiplexing and independent external modulation of three closely spaced ...

    SBIR Phase II 1994 Navy Department of Defense
  9. Growth of Bulk Single Crystal AlN Substrates for AlxGa1-xn Epitaxy

    Amount: $99,984.00

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1-xN epitaxy. Our approach is to use a low pressure, hig ...

    SBIR Phase I 1994 Defense Advanced Research Projects Agency Department of Defense
  10. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    Amount: $99,185.00

    N/A

    SBIR Phase I 1994 Defense Advanced Research Projects Agency Department of Defense

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