GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$49,987.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
18182
Agency Tracking Number:
18182
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2950 Ne 84th Lane, Blaine, MN, 55434
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Jonathan Kuznia
(612) 784-4995
Business Contact:
() -
Research Institute:
n/a
Abstract
Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material systems are still hampered by material quality and low electron mobility. APA Optics, Inc. will solve this problem by combining the high temperature properties of wide bandgap GaN with the superior mobility of GaAs through the use of strained layer superlattices. These GaAs(x-1)N(1-x) superlattices form the basis for a new and high performance transistor capable of operating at high temperature. This approach will substantially reduce the temperature needed for single crystal material. The low temperatures should allow two dissimilar materials to be deposited together without intermixing and thereby making possible GaAs/GaN layers with atomic dimensions. In Phase I, APA Optics, Inc will deposit and characterize the strained layer superlattices for crystalline, electrical and optical quality.

* information listed above is at the time of submission.

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