GaN/AlN Based High Voltage Heterostructure Transistor

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$84,991.00
Award Year:
1995
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
28350
Agency Tracking Number:
28350
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2950 Ne 84th Lane, Blaine, MN, 55449
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
M. Asif Khan
(612) 784-4995
Business Contact:
() -
Research Institute:
n/a
Abstract
High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage heterojunction field effect transistor device structures based on the AlGaN material system. These devices should lead to a considerably larger breakdown voltages and breakdown electric fields. Phase I will determine the material and contact issues responsible for the high field breakdown. Based on the obtained results, models and designs for high voltage GaN based devices and integrated circuits will be developed. High voltage and high power control, power conversion, surge protection, and industrial electronics that operate in adverse conditions.

* information listed above is at the time of submission.

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