Development of Compliant Substrates for GaN Epitaxy

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 28304
Amount: $99,999.00
Phase: Phase I
Program: SBIR
Awards Year: 1995
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
2950 Ne 84th Lane, Blaine, MN, 55449
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. Jinwei Yang
 (612) 784-4995
Business Contact
Phone: () -
Research Institution
We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with GaAs as the starting substrate material and a unique multilayer structure to be deposited using low pressure MOCVD. We propose to investigate an approach based on the use of SIMOX substrates. These compliant substrates will then be used to deposit thin layers of GaN followed by subsequent annealing to relax the structure. Thicker layers of GaN deposited on these structures will have a significantly reduced number of defects. We will at each step analyze the improvements in the defect reduction via X-ray and electron microscopy techniques. We will collaborate with Professor Subash Mahajan's group at CMU. He has significant expertise and resources in the defects analysis area.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government