Development of Compliant Substrates for GaN Epitaxy

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$99,999.00
Award Year:
1995
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
28304
Agency Tracking Number:
28304
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2950 Ne 84th Lane, Blaine, MN, 55449
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Jinwei Yang
(612) 784-4995
Business Contact:
() -
Research Institution:
n/a
Abstract
We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with GaAs as the starting substrate material and a unique multilayer structure to be deposited using low pressure MOCVD. We propose to investigate an approach based on the use of SIMOX substrates. These compliant substrates will then be used to deposit thin layers of GaN followed by subsequent annealing to relax the structure. Thicker layers of GaN deposited on these structures will have a significantly reduced number of defects. We will at each step analyze the improvements in the defect reduction via X-ray and electron microscopy techniques. We will collaborate with Professor Subash Mahajan's group at CMU. He has significant expertise and resources in the defects analysis area.

* information listed above is at the time of submission.

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