A GaN-A1GaN CCD for UV Imaging Applications

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$696,834.00
Award Year:
1996
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
28179
Agency Tracking Number:
28179
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2950 Ne 84th Lane, Blaine, MN, 55449
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
M. Asif Khan
(612) 784-4995
Business Contact:
() -
Research Institute:
n/a
Abstract
We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with a multiple gate structure to demonstrate charge trapping and charge motion capabilities. We have also proposed to demonstrate the imaging capabilities of such a structure via a simple bright and dark field grid pattern. This will put us in an excellent position to fabricate a linear or matrix array type CCD imaging device in Phase II and integrate it with readout electronics.

* information listed above is at the time of submission.

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