Laser Doping for Silicon Carbide Device Fabrication

Award Information
Agency:
National Aeronautics and Space Administration
Amount:
$69,777.00
Program:
SBIR
Contract:
NAS3-03052
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
2003
Phase:
Phase I
Agency Tracking Number:
024208
Solicitation Topic Code:
N/A
Small Business Information
AppliCote Associates
894 Silverado Court, Lake Mary, FL, 32746
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Nathaniel Quick
 Principal Investigator
 (407) 322-4460
 Nquick1262@aol.com
Business Contact
 Nathaniel Quick
Title: Business Official
Phone: (407) 322-4460
Email: Nquick1262@aol.com
Research Institution
N/A
Abstract
Technical AbstractApplicote Associates proposes a 6 month $70K program to establish thefeasibility of controlled laser doping of silicon carbide as an enablingprocess step for the fabrication of advanced microelectronics and sensorsrequiring thermal management, high temperature stability, high power, longlife, radiation hardness and nanoscale features. Doping, is the focus ofthis project with the intent of understanding additional diffusion drivingforces, in addition to the conventional Fick?s driving force, which may arise from laser dopant substrate interactions. The laser doping technology proposedby AppliCote is derived from patented direct write technology, owned bythe PI, that eliminates the need for additive material processes. Theultimate success for microsystem integration based upon wide bandgapsemiconductors, such as silicon carbide, is dependent on materials/processdevelopment, which drives 1) RF/Microwave/Millimeter wave Technology, 2)High Power Conversion and Distribution Electronics and 3) semiconductor UVOptical Sources. A target device to be addressed in Phase II is thedevelopment of a terahertz Schottky diode signal processor.

* information listed above is at the time of submission.

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