Laser Doping for Silicon Carbide Device Fabrication

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$69,777.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
NAS3-03052
Award Id:
66941
Agency Tracking Number:
024208
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
894 Silverado Court, Lake Mary, FL, 32746
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
NathanielQuick
Principal Investigator
(407) 322-4460
Nquick1262@aol.com
Business Contact:
NathanielQuick
Business Official
(407) 322-4460
Nquick1262@aol.com
Research Institute:
n/a
Abstract
Technical AbstractApplicote Associates proposes a 6 month $70K program to establish thefeasibility of controlled laser doping of silicon carbide as an enablingprocess step for the fabrication of advanced microelectronics and sensorsrequiring thermal management, high temperature stability, high power, longlife, radiation hardness and nanoscale features. Doping, is the focus ofthis project with the intent of understanding additional diffusion drivingforces, in addition to the conventional Fick?s driving force, which may arise from laser dopant substrate interactions. The laser doping technology proposedby AppliCote is derived from patented direct write technology, owned bythe PI, that eliminates the need for additive material processes. Theultimate success for microsystem integration based upon wide bandgapsemiconductors, such as silicon carbide, is dependent on materials/processdevelopment, which drives 1) RF/Microwave/Millimeter wave Technology, 2)High Power Conversion and Distribution Electronics and 3) semiconductor UVOptical Sources. A target device to be addressed in Phase II is thedevelopment of a terahertz Schottky diode signal processor.

* information listed above is at the time of submission.

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