Applied Ceramics Research Co.
Metal-Ferroelectric-Insulator Field Effect Transistor (MFISFET) for Radiation Hardened, Non-Destructive-Read-Out (NDRO) Nonvolatile MemoryAmount: $64,000.00
N/ASBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
N/ASBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
"The use of high dielectric constant materials in semiconductor integrated circuits is greatly expanded due to their obvious advantage of providing higher capacitance per unit area compared to the mor ...SBIR Phase II 2002 Missile Defense AgencyDepartment of Defense
Recently, there has been more emphasis on a system-on-a-chip (SOC) to integrate logic, analog functions, volatile and non-volatile memory onto a single chip. In order to overcome limitations of conven ...SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
Novel Ferroelectric Thin Film Materials for Radiation Hard, Non-Destructive Read Out (NDRO) Non-volatile MemoryAmount: $65,000.00
This Small Business Innovation Research Phase I project proposes the development of novel materials to be used in a ferroelectric FET (Field Effect Transistor) memory cell. The proposed memory cell i ...SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense