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A Superior High Dielectric Constant Capacitor with Nickel Electrodes for Use in Integrated Circuits

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-02-C-0065
Agency Tracking Number: 00-0698
Amount: $727,890.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1420 Owl Ridge Dr.
Colorado Springs, CO 80919
United States
DUNS: 042981659
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Lee Kammerdiner
 (719) 948-2109
 lkammer@prodigy.net
Business Contact
 Lee Kammerdiner
Phone: (719) 948-2109
Email: lkammer@prodigy.net
Research Institution
N/A
Abstract

"The use of high dielectric constant materials in semiconductor integrated circuits is greatly expanded due to their obvious advantage of providing higher capacitance per unit area compared to the more conventional silicon oxide/silicon nitride capacitors.There are at least three general areas where these are needed: 1) DRAM memory cells, 2) smart card storage capacitors and 3) decoupling capacitors. In Phase I we took the general approach of developing a capacitor that was not specific to the application.In this proposal the application has been narrowed to the development of an integrated decoupling capacitor. In order to accomplish this we have received support from three semiconductor companies : Atmel, EM Microelectronics and Vitesse. They willsupply us with finished wafers, which we will then use to demonstrate our technology. In the case of the first two companies these will be silicon wafers, while the third application will be on GaAs. At the end of the program we will produce a finishedproduct with integrated decoupling capacitors."

* Information listed above is at the time of submission. *

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