APPLIED OPTOELECTRONICS, INC.

Company Information

Company Name
APPLIED OPTOELECTRONICS, INC.
Address
242 Kingfisher Dr.
Sugar Land, TX, 77478
Phone
1 281-242-2588
URL
n/a
DUNS
5485859
Number of Employees
15
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$933,528.00
14
SBIR Phase II
$4,360,247.00
6
Chart code to be here

Award List

  1. Electrically Pumped Type-II Quantum Well Lasers at 4um

    Amount: $732,298.00

    We will develop high-temperature high-power mid-infrared (2-5 micron) diodes based on InAs/InGaSb/InAlSb type-II quantum wells. In pulse mode operation, we will investigate the pulse-to-pulse reprodu ...

    SBIR Phase II 1998 Air ForceDepartment of Defense
  2. N/A

    Amount: $399,614.00

    N/A

    SBIR Phase II 1999 National Science Foundation
  3. InAs/InGaSb Type-II Superlattice for Mid-IR Photodetectors

    Amount: $99,919.00

    N/A

    SBIR Phase I 1999 Air ForceDepartment of Defense
  4. InAs/InGaSb Type-II Superlattice for Mid-IR Photodetectors

    Amount: $749,985.00

    N/A

    SBIR Phase II 2000 Air ForceDepartment of Defense
  5. Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate

    Amount: $64,966.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  6. Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate

    Amount: $749,587.00

    N/A

    SBIR Phase II 2000 Missile Defense AgencyDepartment of Defense
  7. Multi-color Quantum Cascade Mid-Infrared Sources at 2.5 to 5 ym

    Amount: $64,612.00

    We propose to develop multi-color mid-infrared (IR) sources at 2.5 to 5 um based on InAs/InGaSb type-II quantum cascade (QC) structures. A compact mid-IR dual wavelength source could be extremely usef ...

    SBIR Phase I 1998 Missile Defense AgencyDepartment of Defense
  8. Single-Mode DFB InGaAsP lasers at 1.8 to 2.2 um

    Amount: $69,844.00

    We propose to develop single-mode DFB lasers at 1.8 to 2.2 um based on InGaAsP materails at room temperature with a linewidth of 0.1 to 0l.2 MHz. MBE regrowth technology will be used for the grating. ...

    SBIR Phase I 2001 National Aeronautics and Space Administration
  9. N/A

    Amount: $64,983.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  10. N/A

    Amount: $64,993.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense

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