Single-Mode DFB InGaAsP lasers at 1.8 to 2.2 um

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$69,844.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
NASA1561
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Applied Optoelectronics, Inc.
242 Kingfisher Drive, Sugar Land, TX, 77478
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. James baillargeon
VP for Laser Technology
(281) 242-2588
jimb@ao-inc.com
Business Contact:
Chih-Hsiang Lin
President
(281) 242-2588
chlin@ao-inc.com
Research Institution:
n/a
Abstract
We propose to develop single-mode DFB lasers at 1.8 to 2.2 um based on InGaAsP materails at room temperature with a linewidth of 0.1 to 0l.2 MHz. MBE regrowth technology will be used for the grating. We will also study the device reliability. A compact mid-IR single mode laser could be extremely useful for the enviromental monitoring and pollutant sensing. We have a lot of experience in the IR lasers and demonstrated single-mode type-II interband-cascade (IC) laser with single-frequency mode operation with an output power > 5 mW at 4.5 um, and type-II SL lasers from 2.5 to 4.1 um. An operation temperature of 260 K was achieved for a 2.9-um type-II SL laser. The peak output power per facet exceeds 800 mW at 100 K, and 200 mW at 200 K with a threshold current density of 1.1 kA/cm2. Operation at 286 K was achieved for 3.6 um IC lasers. An external quantum efficiency (EQE) of 580% was achieved for a 4.5-um IC laser at 80K. The Phase I effort will be directed towards the demonstration of the single-mode DFB InGaAsP lasers at 1.8 to 2.2 um at high temperature.

* information listed above is at the time of submission.

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