Single-Mode DFB InGaAsP lasers at 1.8 to 2.2 um

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: NASA1561
Amount: $69,844.00
Phase: Phase I
Program: SBIR
Awards Year: 2001
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Applied Optoelectronics, Inc.
242 Kingfisher Drive, Sugar Land, TX, 77478
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. James baillargeon
 VP for Laser Technology
 (281) 242-2588
Business Contact
 Chih-Hsiang Lin
Title: President
Phone: (281) 242-2588
Research Institution
We propose to develop single-mode DFB lasers at 1.8 to 2.2 um based on InGaAsP materails at room temperature with a linewidth of 0.1 to 0l.2 MHz. MBE regrowth technology will be used for the grating. We will also study the device reliability. A compact mid-IR single mode laser could be extremely useful for the enviromental monitoring and pollutant sensing. We have a lot of experience in the IR lasers and demonstrated single-mode type-II interband-cascade (IC) laser with single-frequency mode operation with an output power > 5 mW at 4.5 um, and type-II SL lasers from 2.5 to 4.1 um. An operation temperature of 260 K was achieved for a 2.9-um type-II SL laser. The peak output power per facet exceeds 800 mW at 100 K, and 200 mW at 200 K with a threshold current density of 1.1 kA/cm2. Operation at 286 K was achieved for 3.6 um IC lasers. An external quantum efficiency (EQE) of 580% was achieved for a 4.5-um IC laser at 80K. The Phase I effort will be directed towards the demonstration of the single-mode DFB InGaAsP lasers at 1.8 to 2.2 um at high temperature.

* information listed above is at the time of submission.

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