Growth of large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetector arrays on compliant substrate

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F3361500C5405
Agency Tracking Number: 99-0128
Amount: $0.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
APPLIED OPTOELECTRONICS, INC.
242 Kingfisher Dr., Sugar Land, TX, 77478
DUNS: 005485859
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
  Lin
 Senior Scientist
 (281) 242-2588
Business Contact
  Lin
Title: President
Phone: (281) 242-2588
Research Institution
N/A
Abstract
InAs/InGaSb type-II superlattices have advantages over HgCdTe for photodetectors requiring higher temperature and longer wavelength operation. The type-II QW photodiodes have comparable quantum efficiency, smaller dark current due to a larger effectivemass, much slower Auger recombination rates, and hence much longer carrier lifetimes. Through careful bandgapengineering, we have suppressed the Auger coefficient by a factor of >8 for 4.5 -um type-II lasers at 300 K. In the phase-I program, we havedemonstrated many high-performance photoconductors directly grown on compliant GaAs substrates with a cutoff wavelength from 11 um to 19 um. We have also demonstrated and dramatically improved the quality of 2-inch compliant GaAs substrates. With theimprovement of materials growth and compliant substrates, more than a factor of 1500 of improvement has been achieved in the photoresponse. Further investigations will be performed to optimize the compliant substrates. Additionally, the coherenttunneling at the mesa-surface is the performance pitfall for ungated SLs mesa devices. To solve this issue, we propose to develop the surface passivation technology using sulfide materials to eliminate the side-wall leakage current. Therefore, we will beable to demonstrate large photodiode arrays with a detectivity >5x1012 cmHz 0.5/W at a wavelength of 14, um at 55 K.Critical military needs include missile defense, remote chemical sensing for defense against biological/chemical warfare, and medical.Commercial markets include leak detection, chemical process control, remote chemical sensing for atmospheric pollution and drug monitoring, IR spectroscopy, and medical diagnoses. With the development of high-performance photodectors, this program shouldconsiderably accelerate the commercialization of mid-IR photodetectors to meet the potential needs of the huge defense and commercial market

* information listed above is at the time of submission.

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government