MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2 - 5 Microns

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$366,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
19982
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Applied Optronics Corp
111 Corporate Blvd., Building, J, South Plainfield, NJ, 07080
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Kevin Ma
(908) 753-6300
Business Contact:
() -
Research Institution:
n/a
Abstract
It is the goal of Applied Optronics to develop, fabricate and package antimony alloy diode lasers capable of high power operation at wavelengths between 2 and 5 microns, and to design a practical, high performance master oscillator power amplifier (MOPA) device based on antimony alloy diode lasers. In the proposed effort, Applied Optronics will use newly developed aluminum, gallium, and antimony metal organic sources to grow high purity, narrow bandgap III-V materials by the MOCVD technique. These new sources have been demonstrated to reduce carbon contamination in MOCVD grown materials, and will allow Applied Optronics to grow antimony alloy, high power laser structures with improved performance in the 2 to 5 micron band compared to existing semiconductor lasers. Applied Optronics will design these devices for later integration into a MOPA device. Objectives include design of a high power GaInAsSb/AlGaAsSb laser structure, growth by MOCVD using trimethylamine alane (TiPSb), development of a suitable device fabrication process including etching, coating and metallization for GaInAsSb/AlGaAsSb laser and MOPA structures, and design of a MOPA device in the antimony alloy material system.

* information listed above is at the time of submission.

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