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MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2 - 5 Microns

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 19982
Amount: $366,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
111 Corporate Blvd., Building J
South Plainfield, NJ 07080
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. Kevin Ma
 (908) 753-6300
Business Contact
Phone: () -
Research Institution

It is the goal of Applied Optronics to develop, fabricate and package antimony alloy diode lasers capable of high power operation at wavelengths between 2 and 5 microns, and to design a practical, high performance master oscillator power amplifier (MOPA) device based on antimony alloy diode lasers. In the proposed effort, Applied Optronics will use newly developed aluminum, gallium, and antimony metal organic sources to grow high purity, narrow bandgap III-V materials by the MOCVD technique. These new sources have been demonstrated to reduce carbon contamination in MOCVD grown materials, and will allow Applied Optronics to grow antimony alloy, high power laser structures with improved performance in the 2 to 5 micron band compared to existing semiconductor lasers. Applied Optronics will design these devices for later integration into a MOPA device. Objectives include design of a high power GaInAsSb/AlGaAsSb laser structure, growth by MOCVD using trimethylamine alane (TiPSb), development of a suitable device fabrication process including etching, coating and metallization for GaInAsSb/AlGaAsSb laser and MOPA structures, and design of a MOPA device in the antimony alloy material system.

* Information listed above is at the time of submission. *

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