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Development of Visible Diode Lasers by Using I-III-VI2 Semiconductor

Award Information
Agency: Department of Commerce
Branch: N/A
Contract: N/A
Agency Tracking Number: 37791
Amount: $49,495.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
111 Corporate Boulevard, Building J
South Plainfield, NJ 07080
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jennhwa Fu
 () -
Business Contact
Phone: (908) 753-6300
Research Institution

The proposed Phase 1 approach utilizes a material system, the I-III-VI2 compounds, for which some early success in the fabrication of laser devices and LEDs has been achieved in Japan. The benefits to this material include: ease in forming p-n junction, greater thermal conductivity, higher bond strength in the crystal, less thermal stresses and ease in making metal contacts. The proposed effort involves the fabrication of one or two visible diode laser prototypes from this material system, with subsequent testing and evaluation. The proposed visible diode lasers to be fabricated under this effort will be grown on commercially-available p-GaAs or p-GaP substrates. Testing of these devices will be aimed primarily at determining their electronic and performance characteristics.

* Information listed above is at the time of submission. *

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