Solid State Switch for high voltage sub-microsecond pulsed power

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9451-09-C-0010
Agency Tracking Number: F073-008-0477
Amount: $748,400.00
Phase: Phase II
Program: SBIR
Awards Year: 2009
Solicitation Year: 2007
Solicitation Topic Code: AF073-008
Solicitation Number: 2007.3
Small Business Information
2025 Dryden Road, P.O. Box 348, Freeville, NY, 13068
DUNS: 622319986
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Howard Sanders
 Manager
 (607) 844-3426
 hds@appliedpulsedpower.com
Business Contact
 Steven Glidden
Title: President
Phone: (607) 844-3426
Email: scg@appliedpulsedpower.com
Research Institution
N/A
Abstract
ABSTRACT: Applied Pulsed Power, Inc. (APP) proposes to develop a solid state switch for high voltage sub-microsecond pulsed power, using silicon carbide modules. The objective of the solicitation is to develop a compact, solid state pulsed power switch capable of switching 20-50 kV, and I > 5 kA with low jitter, fast rise time (~20 ns), L < 20 nH, pulse length 100 to 1000 ns, and up to 1000 Hz prf. APP has developed and presently sells solid state switches capable of switching 20-50 kV, and I > 5 kA with low jitter, pulse length to 1000 ns, and up to 1000 Hz prf using silicon thyristors.[1,2] These switches are used for applications with pulsewidths > 200 ns and di/dt of < 100 kA/us. Patented packaging and triggering techniques are used to produce 20-60 kV switches from multiple identical lower voltage modules.[3,4,5] APP is also developing laser triggered, fast turn on, silicon switches.[6] We will apply these techniques to silicon carbide devices to produce low inductance (< 1nH/kV) switches with <20 ns risetimes. BENEFIT: The results of our approach would be compact, high voltage, high power, silicon carbide, solid state switches capable of faster rise time, higher operating temperatures and with lower inductance than silicon switches. In contrast to thyratrons and spark gaps, the SiC switches will be capable of operation in harsh environments, have long service lifetimes and are without the requirement of filament power supplies, high voltage trigger systems, gas handling or other axillary systems. This research will develop new applications for solid state switches such as radar, microwave, lasers for eye surgery and modulators for radiation therapy which all require 100ns switching that cannot be accomplished with the currently available solid state switch technology.

* Information listed above is at the time of submission. *

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