DIAMOND P/N JUNCTION FORMATION FOR HIGH TEMPERATURE RADIATION RESISTANT ELECTRONICS

Award Information
Agency:
Department of Defense
Branch:
Air Force
Amount:
$50,035.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
9450
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Applied Sciences Inc
Po Box 186 - 800 Livermore St, Yellow Springs, OH, 45387
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Max L Lake
 (513) 767-1477
Business Contact
Phone: () -
Research Institution
N/A
Abstract
CRYSTALLINE DIAMOND HAS OUTSTANDING POTENTIAL FOR USE AS A HIGH TEMPERATURE RADIATION TOLERANT ELECTRONIC MATERIAL. RECENTLY A JAPANESE GROUP WAS ABLE TO GROW LARGE AREA N-TYPE AS WELL AS P-TYPE DIAMOND CRYSTALS BY DOPING DURING VAPOR PHASE GROWTH. THE PURPOSE OF THE PROPOSED RESEARCH IS TO GROW N-TYPE DIAMOND ON TOP OF P-TYPE DIAMOND TO FORM A PN JUNCTION, AND TO ASSESS THE QUALITY OF THE DIODES THUS FORMED. IF GOOD JUNCTIONS CAN BE DEMONSTRATED IN PHASE I THEN BIPOLAR TRANSISTOR FORMATION AND PERFORMANCE EVALUATION WILL BE MADE IN PHASE II.

* information listed above is at the time of submission.

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