DIAMOND P/N JUNCTION FORMATION FOR HIGH TEMPERATURE RADIATION RESISTANT ELECTRONICS

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 9450
Amount: $50,035.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Applied Sciences Inc
Po Box 186 - 800 Livermore St, Yellow Springs, OH, 45387
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Max L Lake
 (513) 767-1477
Business Contact
Phone: () -
Research Institution
N/A
Abstract
CRYSTALLINE DIAMOND HAS OUTSTANDING POTENTIAL FOR USE AS A HIGH TEMPERATURE RADIATION TOLERANT ELECTRONIC MATERIAL. RECENTLY A JAPANESE GROUP WAS ABLE TO GROW LARGE AREA N-TYPE AS WELL AS P-TYPE DIAMOND CRYSTALS BY DOPING DURING VAPOR PHASE GROWTH. THE PURPOSE OF THE PROPOSED RESEARCH IS TO GROW N-TYPE DIAMOND ON TOP OF P-TYPE DIAMOND TO FORM A PN JUNCTION, AND TO ASSESS THE QUALITY OF THE DIODES THUS FORMED. IF GOOD JUNCTIONS CAN BE DEMONSTRATED IN PHASE I THEN BIPOLAR TRANSISTOR FORMATION AND PERFORMANCE EVALUATION WILL BE MADE IN PHASE II.

* information listed above is at the time of submission.

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