SLS Photodiodes Grown by MOCVD

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7357
Agency Tracking Number: B093-013-0473
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: MDA09-013
Solicitation Number: 2009.3
Small Business Information
22 Cotton Road, Unit H, Suite 180, Nashua, NH, 03063
DUNS: 168454770
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mani Sundaram
 (603) 821-3092
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3092
Research Institution
We propose to experimentally investigate MOCVD (Metal Organic Chemical Vapor Deposition) as a technique for growing high-quality Type-II InAs/(In)GaSb SLS (Strained Layer Superlattice) photodiode epi material. In collaboration with the University of Maryland, our goal is to grow, process, and measure longwave infrared detector material and devices and compare them to identical MBE (Molecular Beam Epitaxy) -grown material and devices. MOCVD''s advantages include faster growth rates, fewer defects, and superior optical device epi (resulting from fewer deep traps and non-radiative recombination centers). If these advantages hold true for SLS epi, minority carrier lifetime, diffusion length, quantum efficiency, and array pixel operability can be significantly improved. In Phase I, we will check the promise of MOCVD. If feasible, Phase II will optimize growth and fabricate FPAs (focal plane arrays).

* Information listed above is at the time of submission. *

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