SLS Photodiodes Grown by MOCVD
Department of Defense
Missile Defense Agency
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22 Cotton Road, Unit H, Suite 180, Nashua, NH, 03063
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AbstractWe propose to experimentally investigate MOCVD (Metal Organic Chemical Vapor Deposition) as a technique for growing high-quality Type-II InAs/(In)GaSb SLS (Strained Layer Superlattice) photodiode epi material. In collaboration with the University of Maryland, our goal is to grow, process, and measure longwave infrared detector material and devices and compare them to identical MBE (Molecular Beam Epitaxy) -grown material and devices. MOCVD''s advantages include faster growth rates, fewer defects, and superior optical device epi (resulting from fewer deep traps and non-radiative recombination centers). If these advantages hold true for SLS epi, minority carrier lifetime, diffusion length, quantum efficiency, and array pixel operability can be significantly improved. In Phase I, we will check the promise of MOCVD. If feasible, Phase II will optimize growth and fabricate FPAs (focal plane arrays).
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