Arkansas Power Electronics International, Inc.

Address

535 W. Research Center Blvd.
Fayetteville, AR, 72701-6559

http://www.apei.net

Information

DUNS: 121539790
# of Employees: 49

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. High Power Density GaN-Based Power Converters for Grid-Tied Energy Storage

    Amount: $149,997.06

    Power generation and transmission limits manifest themselves in the inability to respond to dynamic peak power demand. Load leveling can effectively support dynamic demand changes by having additional ...

    SBIRPhase I2015Department of Energy
  2. A High Efficiency, High Power Density, GaN-Based DC-DC Converter for Grid-Tied Energy Storage Applications

    Amount: $999,994.00

    Power generation and transmission limits manifest themselves in the inability to respond to dynamic peak power demand. Load leveling can effectively support dynamic demand changes by having additional ...

    SBIRPhase II2015Department of Energy
  3. Extreme Temperature Radiation Tolerant Instrumentation for Nuclear Thermal Propulsion Engines

    Amount: $124,998.00

    The objective of this proposal is to develop and commercialize a high reliability, high temperature smart neutron flux sensor for NASA Nuclear Thermal Propulsion (NTP) systems. Arkansas Power Electron ...

    SBIRPhase I2015National Aeronautics and Space Administration
  4. A 300C Power Module Using Wide Bandgap Devices, Advanced Materials/Processes, and High Temperature Integrated Circuits for Geothermal Applications

    Amount: $149,979.38

    Geothermal energy is a cost effective, reliable, environment-friendly, and sustainable energy source that has been utilized for space heating since Roman times but is now in recent years has become mo ...

    SBIRPhase I2015Department of Energy
  5. A Modular High Voltage (> 10 kV), High Power Density SiC Power Package for Extreme Environments

    Amount: $79,971.00

    A modular high voltage (>10 kV), high power density silicon carbide-based power switch will be designed and developed to withstand the extreme environments associated with military applications in sur ...

    SBIRPhase I2015Department of Defense
  6. Reliability of Commercially Available and State-of-the-Art SiC MOSFETs Under Gate Stress and Body Diode Stress

    Amount: $149,949.90

    An ideal transistor from a circuit designers standpoint consists of an ultra-low on-resistance, majority carrier switching, low gate current drive, and normally-off design. These features are inherent ...

    SBIRPhase I2014Department of Energy
  7. Highly Efficient, High Power Density GaN-based DC-DC Converters for Grid-Tied Energy Storage Applications

    Amount: $149,998.52

    APEI, Inc. is proposing in this Phase I effort to design and build a scalable, high-efficiency, high-power density, gallium nitride (GaN)-based DC-DC converter for grid-tied energy storage application ...

    SBIRPhase I2014Department of Energy
  8. High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

    Amount: $999,996.25

    In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. ...

    SBIRPhase II2014Department of Energy
  9. High Temperature (300 °C) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

    Amount: $149,824.00

    SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Smaller switching and on-state losses coupled with higher voltage blocking capability, and especially its ...

    SBIRPhase I2013Department of Energy
  10. Compact, High-Power Density, High-Voltage Silicon Carbide (SiC) Based Solid-State Circuit Protection Device (SSCPD) Incorporating Advanced Power Pack

    Amount: $99,944.00

    This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon c ...

    SBIRPhase I2013Department of Defense

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