Development of High-Temperature Control Circuitry

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$749,749.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
W911QX-04-C-0110
Agency Tracking Number:
O022-0497
Solicitation Year:
2002
Solicitation Topic Code:
OSD02-EP03
Solicitation Number:
2002.2
Small Business Information
ARKANSAS POWER ELECTRONICS INTERNATIONAL
700 W Research Center Blvd., Fayetteville, AR, 72701
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
Alexander Lostetter
President of APEI, Inc.
(479) 443-5759
alostet@uark.edu
Business Contact:
Sharmila Magan Lal
Design Engineer
(479) 443-5759
smaganl@uark.edu
Research Institution:
n/a
Abstract
This Phase II SBIR proposal seeks to develop high-temperature electronics by integrating motor drive control and SiC power electronics into a single, compact, highly efficient, reliable, high power density multichip power module (MCPM). Phase II will build upon the Phase I "proof of concept" protoboard hardware. A Phase I demonstration to ARL scientists proved feasibility of the proposed APEI, Inc. technology by operating up to 250 degrees Celsius under full motor load conditions. The theoretical limit of temperature operation for the new class of SiC power semiconductors now under research is in excess of 600 degrees Celsius, bringing to light the opportunity to make major strides in power electronics miniaturization and increased power density. By developing the highly integrated MCPM technology outlined in this Phase II proposal, 90% size and weight reductions in power electronics systems can be achieved.

* information listed above is at the time of submission.

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