Development of High-Temperature Control Circuitry

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-04-C-0110
Agency Tracking Number: O022-0497
Amount: $749,749.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solitcitation Year: 2002
Solitcitation Topic Code: OSD02-EP03
Solitcitation Number: 2002.2
Small Business Information
700 W Research Center Blvd., Fayetteville, AR, 72701
Duns: 121539790
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Alexander Lostetter
 President of APEI, Inc.
 (479) 443-5759
Business Contact
 Sharmila Magan Lal
Title: Design Engineer
Phone: (479) 443-5759
Research Institution
This Phase II SBIR proposal seeks to develop high-temperature electronics by integrating motor drive control and SiC power electronics into a single, compact, highly efficient, reliable, high power density multichip power module (MCPM). Phase II will build upon the Phase I "proof of concept" protoboard hardware. A Phase I demonstration to ARL scientists proved feasibility of the proposed APEI, Inc. technology by operating up to 250 degrees Celsius under full motor load conditions. The theoretical limit of temperature operation for the new class of SiC power semiconductors now under research is in excess of 600 degrees Celsius, bringing to light the opportunity to make major strides in power electronics miniaturization and increased power density. By developing the highly integrated MCPM technology outlined in this Phase II proposal, 90% size and weight reductions in power electronics systems can be achieved.

* information listed above is at the time of submission.

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