Fast Acting Solid State Silicon Carbide (SiC) based Fault Current Limiters for Electrical Distribution Systems

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,991.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
N65538-07-M-0067
Award Id:
77385
Agency Tracking Number:
N062-134-0113
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
535 W. Research Center Blvd., Suite 209, Fayetteville, AR, 72701
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
RobertoSchupbach
Senior Engineer
(479) 443-5759
marcelo@apei.net
Business Contact:
SharmilaMounce
Design Engineer
(479) 443-5759
smounce@apei.net
Research Institute:
n/a
Abstract
This Small Business Innovation Research Phase I project seeks to develop and prove the feasibility of realizing high-voltage, high-power density Solid-State Fault Current Limiter (SSFCL) technology utilizing Silicon Carbide (SiC) thyristors. The proposed fault current detection and limitation technology will be more efficient, have a higher power density, and be more cost effective for US Navy applications. For this project, Arkansas Power Electronics International, Inc. (APEI, Inc.), with expertise in SiC-based power electronics systems and SiC power packaging, will partner with the congressionally funded University of Arkansas' National Center for Reliable Electric Power Transmission (NCREPT), with expertise in the design and testing of transmission and distribution components / systems (such as SSFCLs). APEI, Inc. will prove the feasibility of the proposed concept and design through the successful demonstration of an SSFCL hardware prototype by the conclusion of Phase I. The work in Phase I will first concentrate on the packaging and characterization of 1kV/36A SiC thyristors, followed by the design, building, and testing of an SSFCL prototype using the SiC thyristors. In Phase II, APEI, Inc. will focus on extending the power rating of the SSFCL to 15kV/1kA by utilizing 5.2kV/100A SiC thyristors.

* information listed above is at the time of submission.

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