Ultra Low Power - Rad-Hard SRAM

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
FA9453-10-M-0152
Agency Tracking Number:
F093-082-2103
Solicitation Year:
2009
Solicitation Topic Code:
AF093-082
Solicitation Number:
2009.3
Small Business Information
RNET Technologies, Inc.
240 W. Elmwood Dr., Suite 2010, Dayton, OH, 45459
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
141943030
Principal Investigator:
Todd Grimes
Project Manager
(937) 433-2886
tgrimes@Rnet-Tech.com
Business Contact:
V. Nagarajan
President
(937) 433-2886
vnagarajan@Rnet-Tech.com
Research Institution:
n/a
Abstract
Affordable satellite communications support for tomorrow’s warfighter is of utmost importance. As a result, the payloads for military communication satellite are likely to grow in size, weight, and complexity with greater levels of power compensation. Therefore, the Air Force is interested in the exploration of more power efficient communications processing microelectronics with enhanced performance, while remaining within the space and weight (lift) limits of a Medium Launch Vehicle. Therefore, the Air Force is interested in the development of power efficient, reliable, high speed, Single Event Effect (SEE) immune memory and/or logic devices capable of operating with a supply voltage of 2.5 volts or less to reduce power requirements and to withstand a variety of harsh environmental effects from long term Geosynchronous Earth Orbit (GEO), along with a variety of additional requirements.. As result, we are planning to demonstrate an Ultra Low Power (ULP) SRAM architecture integrated with an innovative radiation hardening techniques in the Phase I program. The ULP SRAM will be designed to support both high performance and ULP modes of operation. BENEFIT: It is anticipated that the Phase I work will demonstrate the feasibility of our innovative ULP/Rad-Hard SRAM architecture. In Phase II, we will optimize the designs developed in Phase I and then fabricate “prototype” devices, which will be thoroughly evaluated for meeting the ULP and rad-hard performance requirements. Development of a ULP/Rad-Hard SRAM device is paramount to fulfill military (and other agencies) needs in support of communication satellites, avionics, and ground terminals, which can also be applied to equivalent commercial applications.

* information listed above is at the time of submission.

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