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Monolithic Integration of Photonic and Electronic Devices for High Performance EPICs (Electronic-Photonic Integrated Circuits)

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-04-C-R216
Agency Tracking Number: 04SB1-0530
Amount: $90,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB041-031
Solicitation Number: 2004.1
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-08-17
Award End Date (Contract End Date): 2005-04-15
Small Business Information
25 Worlds Fair Drive
Somerset, NJ 08873
United States
DUNS: 002000730
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Kenneth Thomson
 Engineering Manager
 (609) 537-5512
 john.thomson@asipinc.com
Business Contact
 Amar Shrivastava
Title: Business Manager
Phone: (609) 537-5503
Email: amar.shrivastava@asipinc.com
Research Institution
N/A
Abstract

In Phase 1 we will demonstrate the feasibility of integrating high-speed InP-based HEMTs with ASIP's proprietary asymmetric twin waveguide photonic integration technology. A common source HEMT driver transistor will be integrated with a simple, asymmetric twin waveguide (ATG) compatible laser. In Phase 2, we will extend this feasibility demonstration to demonstrate an EPIC consisting of a single wavelength, 1.55 um DFB laser integrated with an electroabsorption modulator (EML) and electronic circuitry to linearize the modulator response for use in analog transmission. On-chip electronics using the same high-speed transistor technology will also be used to demonstrate a low-speed electronic functionality of wavelength locking a 10Gb/s 1550nm, EML with an integrated wavelength sensitive optical element.

* Information listed above is at the time of submission. *

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