Novel Method for Strengthening Sapphire at Elevated Temperatures

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 32565
Amount: $69,996.00
Phase: Phase I
Program: SBIR
Awards Year: 1996
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Aspen Systems, Inc.
184 Cedar Hill Street, Marlborough, MA, 01752
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Thomas M. Regan
 (508) 481-5058
Business Contact
Phone: () -
Research Institution
N/A
Abstract
Aspen Systems proposes to develop a novel process to increase the strength of sapphire at elevated temperatures. The resulting strength increase will alleviate the adverse effects of frictional heating of sapphire windows. Frictional heating can initiate a c-axis strength loss, leading to premature failure. The Aspen process will uniformly implant silicon atoms through the entire window, as well as, result in the production of uniform point defects throughout the crystal structure. These mechanisms will pin the crystal lattice, resulting in a structure more resistant to rhombohedral twinning and thermal shock failure. Preliminary tests conducted by Aspen Systems have demonstrated that this process can be applied to high purity sapphire with no adverse effects on the transmission characteristics in the Midwave (3-5mm) region. For the Phase I effort we will demonstrate proof-of-principal that our process can increase the high temperature strength of sapphire without degrading its optical properties. During the Phase I Option and Phase II effort, we will optimize and tune the process to maximize the high temperature strength of the resulting sapphire. A statistically significant number of sapphire coupons will be processed and tested to verify the mechanical properties of the modified dome material. The processing method used in Phase I and Phase II can readily be scaled to meet both military and civilian needs.

* information listed above is at the time of submission.

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