ASTRALUX, INC.

Company Information

Company Name
ASTRALUX, INC.
Address
2500 CENTRAL AVE.
# 286
Boulder, CO, 80301 2845
Phone
1 303-413-1440
URL
n/a
DUNS
940915358
Number of Employees
3
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$2,293,682.00
32
SBIR Phase II
$4,126,150.00
9
STTR Phase I
$201,609.00
3

Award List

  1. High Temperature Optoelectronics

    Amount: $300,000.00

    There are no commercial amplifiers that can operate at temperatures above 125 degrees Celsius. We will combine two comparable wide bandgap semiconducting materials to make electronic amplifiers and sw ...

    SBIR Phase II 1993 Missile Defense AgencyDepartment of Defense
  2. IV-II-VI Wide Bandgap Alloys and Superlattices

    Amount: $50,000.00

    Astralux will develop IV-II-VI compound semiconductors by synthesizing compounds and characterizing their properties as a function of the deposition parameters. The material will be a combination of l ...

    SBIR Phase I 1992 Missile Defense AgencyDepartment of Defense
  3. Biotechnology Applied Nanostructures

    Amount: $290,000.00

    WE PROPOSE TO APPLY A BIOTECHNOLOGY-BASED PROCESS TO MAKE NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS. THE RESULT WILL BE A UNIFORM ARRAY OF SILICON QUANTUM BOXES OF IDENTICAL DIMENSIONS IN A SILIC ...

    SBIR Phase II 1994 Missile Defense AgencyDepartment of Defense
  4. Wide Bandgap Semiconductors for High-Temperature Electronics

    Amount: $63,051.00

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  5. ECR-Ion Beam Deposition for III-Nitride Semiconductors

    Amount: $50,000.00

    WE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  6. Rare Earth Doped III-V Semiconductor for Optoelectronics

    Amount: $65,000.00

    THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMM ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  7. GROWTH OF GAN SINGLE-CRYSTAL BOULES

    Amount: $58,184.00

    The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching cry ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  8. SOLAR-BLIND GAN/ALN UV AND VUV SENSOR

    Amount: $59,995.00

    Astralux, Inc. will develolp a seminconductor sensor sensitive to bacuum ultraviolet photons. For this, we shall synthesize a wide bandgap semiconductor capable of forming a built-in electric field th ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  9. DIAMOND-BASED THERMAL SENSORY ELEMENT

    Amount: $58,156.00

    There is a market for a room temperature infrared detector as well as for a detection system which is radiation resistant and works at high temperatures and in reactive environments. Current infrared ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  10. Rare Earth Doped III-V Semiconductor for Optoelectronics

    Amount: $65,000.00

    The proposed research and development effort will explore the electroluminescene properties of rare earth elements in a III-V semiconductor. The technique of impact excitation, currently used in comme ...

    SBIR Phase I 1994 Air ForceDepartment of Defense

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