GROWTH OF GAN SINGLE-CRYSTAL BOULES

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$58,184.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25532
Agency Tracking Number:
25532
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2386 Vassar Drive, Boulder, CO, 80303
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Ting Lei
(303) 494-0670
Business Contact:
() -
Research Institution:
n/a
Abstract
The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up during Phase II, leadin gto commercial production within two years. A similar technique can be used to generate other nitrides in single-crystal form: A1N, InN, TiN, ErN, and possible their alloys.

* information listed above is at the time of submission.

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