GROWTH OF GAN SINGLE-CRYSTAL BOULES

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25532
Amount: $58,184.00
Phase: Phase I
Program: SBIR
Awards Year: 1994
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
2386 Vassar Drive, Boulder, CO, 80303
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ting Lei
 (303) 494-0670
Business Contact
Phone: () -
Research Institution
N/A
Abstract
The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up during Phase II, leadin gto commercial production within two years. A similar technique can be used to generate other nitrides in single-crystal form: A1N, InN, TiN, ErN, and possible their alloys.

* Information listed above is at the time of submission. *

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