High Temperature Package for SiC-based Transistors
Small Business Information
2386 Vassar Drive, Boulder, CO, 80309
Dr. Christopher M. Walker
AbstractAstralux is developing heterobipolar transistors (HBT) using a SiC base. This device operates above 500 C with a current gain in excess of 100. Most of the effort went into design, technology, and characterization of these devices. To make the HBT into a commercial product, the technology of contacts and packaging must be developed. This proposal considers a joint project with NAWCAD and a packaging company to develop a commercially viable package.
* information listed above is at the time of submission.