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Large-area and low-cost hybrid SIC wafers

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001402C0425
Agency Tracking Number: 00-1078
Amount: $496,370.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2003
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2500 Central Ave.
Boulder, CO 80301
United States
DUNS: 940915358
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Staff Scientist
 (303) 413-1440
Business Contact
Title: VP Business Development
Phone: (303) 413-1440
Research Institution

Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the emerging wide bandgap microwave device market. Our hybrid SiC wafers are complementary to the existing bulk SiC wafers, and our value added is to increase the production volume and significantly reduce the cost oflow-defect larger-area substrates. With market acceptance, we will add products such as wafers of different conductivity types for near-dc high voltage/power devices (off-axes) and possibly even laser diodes (on-axes). During Phase I, researchers atAstralux demonstrated a three-step process to make hybrid SiC wafers. All Phase I milestones were reached, the goals accomplished and we are now ready for prototype development in Phase II. An important feature of this program is to work closely with aSiC manufacturer to gain access to the best available SiC wafers and an AlGaN HEMT manufacturer who will test our substrates by growing/fabricating/testing RF devices and comparing the performance with devices made on conventional substrates.Theavailability of affordable and high quality 3 and 4-inch semi-insulating SiC wafers is crucial for SiC and III-V nitride power transistor manufacturing

* Information listed above is at the time of submission. *

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