Silicon Carbide Power Transistors for High Power Transmitter

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
F33615-01-M-1938
Agency Tracking Number:
011SN-2032
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
ASTRALUX, INC.
2500 Central Ave., Boulder, CO, 80301
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
940915358
Principal Investigator:
John Torvik
Staff Scientist
(303) 413-1440
jtorvik@astraluxinc.com
Business Contact:
Jacques Pankove
Vice President
(303) 413-1440
pankove@astraluxinc.com
Research Institution:
n/a
Abstract
Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal is a 4H-SiC bipolar junction transistor (BJT) withpulsed power up to 650 W, single stage power gain up to 12 dB and bandwidth up to 3 GHz. The advantages of bipolar devices over Si-based devices include power gain, superior linearity and stability combined with a higher power dissipation capability.Compared to other SiC devices, the BJT provides better power added efficiency, higher power gain and superior linearity while operating on a single supply voltage, leading to more compact and cost efficient systems.SiC BJTs are identified as potentialhigh-power microwave devices and would greatly benefit the development of high-power transmitters and wireless communication.

* information listed above is at the time of submission.

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