Silicon Carbide Power Transistors for High Power Transmitter

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: F33615-01-M-1938
Agency Tracking Number: 011SN-2032
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
2500 Central Ave., Boulder, CO, 80301
DUNS: 940915358
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 John Torvik
 Staff Scientist
 (303) 413-1440
Business Contact
 Jacques Pankove
Title: Vice President
Phone: (303) 413-1440
Research Institution
Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal is a 4H-SiC bipolar junction transistor (BJT) withpulsed power up to 650 W, single stage power gain up to 12 dB and bandwidth up to 3 GHz. The advantages of bipolar devices over Si-based devices include power gain, superior linearity and stability combined with a higher power dissipation capability.Compared to other SiC devices, the BJT provides better power added efficiency, higher power gain and superior linearity while operating on a single supply voltage, leading to more compact and cost efficient systems.SiC BJTs are identified as potentialhigh-power microwave devices and would greatly benefit the development of high-power transmitters and wireless communication.

* Information listed above is at the time of submission. *

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